| 摘要 |
PURPOSE:To provide an oxide magnetic thin film which can be simply controlled in its crystal orientation with excellent crystal orientation property by forming a wustite phase thin film and a spinel phase ferrite thin film formed on the wustite phase film. CONSTITUTION:After a wustite phase thin film of predetermined orientation is grown under a suitable sputtering condition, the condition is altered to grown a spinel phase ferrite thin film. The coating method of the thin films employs, in addition to a sputtering method, various vacuum thin film forming technique. Of them, a reactive sputtering is preferable. That is, according to the reactive sputtering, when the mixture ratio of gases is varied, various magnetic thin films having different compositions and crystal orientations are formed, and the wustite phase thin film, spinel phase ferrite thin film or amorphous phase thin film is formed by changing an applying power, Ar gas pressure, gas flow rate, oxygen ratio, substrate temperature and bias voltage.
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