发明名称 PLASMA DEVICE
摘要 PURPOSE:To form a film having uniform and good quality with simple constitution by disposing a cylindrical substrate in a plasma chamber to which a microwave and magnetic field are impressed and making the intensity distribution of the magnetic field high near the cylindrical substrate and low in the position apart therefrom in the outside circumferential direction. CONSTITUTION:The cylindrical substrate 2 is disposed into the plasma chamber 1 where plasma is induced by the microwave and magnetic field. A gas for CVD is then introduced into said chamber. The above-mentioned magnetic field is impressed in approximately parallel with the substrate 2 by hole pieces 8 disposed on the outside of the plasma chamber 1. The intensity distribution thereof is formed high near the cylindrical substrate 2 and low in the position apart therefrom in the outside circumferential direction. The direct contact of the plasma with the chamber wall is thereby obviated and the ions and free radicals are transported to the cylindrical substrate 2 by which the good-quality film is formed without a rotating mechanism. The intensity of the magnetic field near the cylindrical substrate 2 is adjusted to the intensity at which electron cyclotron resonance arises or above and the plasma chamber 1 is formed to the cylindrical shape coaxial with the cylindrical substrate 2 so that a coaxial or semi-coaxial type microwave resonator is preferably formed by both.
申请公布号 JPS62205281(A) 申请公布日期 1987.09.09
申请号 JP19860046557 申请日期 1986.03.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MANABE YOSHIO;MITSUYU TSUNEO;YAMAZAKI OSAMU
分类号 C23C16/50;C23C16/511;C23F4/00 主分类号 C23C16/50
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