| 摘要 |
PURPOSE:To shorten a contact forming time by forming a thin film of silicon, metal or metal silicide on the side of a contact hole formed in an insulating film. CONSTITUTION:After a silicon substrate 1 is covered with a silicon oxide film 2 of approx. 1mum thick by a CVD method, a contact hole 6 of 1mum in diameter is formed. A silicon film 3 having good stepwise coverage is deposited approx. 0.1mum thick by a reduced pressure CVD method on the substrate 1, the entire substrate is anisotropically sputter etched, and only the film 3 deposited on the side of the hole 6 remains. A tungsten film is deposited only on an exposed silicon region by a reduced pressure CVD method using mixture gas of tungsten hexafluoride and hydrogen under the condition of 350 deg.C of substrate temperature, 7mTorr of vacuum degree and 1:70 of tungsten hexafluoride gas flow rate to hydrogen gas flow rate, and the hole 6 is densely buried therein. An aluminum film 5 is deposited on the entire substrate 1, and a wiring pattern is formed by photoetching and dry etching steps to complete a contact electrode 10.
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