| 摘要 |
PURPOSE:To apply the evaluation of a memory characteristic or the analysis of defects easily in a short time by measuring a bit line potential or setting the potential externally forcibly. CONSTITUTION:In evaluating the memory characteristic, MOS switches are turned on respectively to output the potential of bit lines BL1...BLn, and the inverses of BL1...BLn to the 1st and 2nd signal lines 11, 12 through MOS transistors T1...Tn and the inverses of T1...Tn, and the bit line potential is measured by leading the output potential directly or through other circuit components to the outside of the memory. In this case, the mean value of the potentials of the non-inverting bit lines BL1...BLn is outputted to the 1st signal line 11 and the mean value of the potentials of the inverses of bit lines BL1...BLn at the antiphase side is outputted to the 2nd signal line 12. Similarly, in analyzing the defect in memory characteristic, the MOS switches are turned on respectively.
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