| 摘要 |
PURPOSE:To improve durability and mechanical strength by providing a recording film mixed with a semiconductor material which makes reversible phase transfer between an equil. phase and nonequil. phase according to the irradiation conditions of a light beam in a nitride dielectric. CONSTITUTION:The recording film 5 is a single mixed film formed by dispersing and mixing a semiconductor 7 of pulverized particles by a two-dimensional simultaneous sputtering method into the nitride dielectric 6 such as amorphous silicon nitride (A-Si nitride) or aluminum nitride in such a manner that said semiconductor is incorporated therein at 40-80% by volume. The recording film 5 is made into the structure consisting in dispersing the semiconductor 7 which is chemically unstable and has poor durability in the form of the pulverized particles into the chemically stable A-Si nitride 6 which permits the phase change thereof. The pulverized articles of the semiconductor 7 dispersed into the recording film 5 can transfer easily to either state of the equil. phase and nonequil. phase and in addition, the durability which is important as the recording film 5 is remarkably improved. |
