| 摘要 |
PURPOSE:To create electrons and positive holes efficiently and provide easy working by a method wherein semiconductors are provided on the surface of a light transmitting substrate opposite to the light incidence surface and P-type region and an N-type region are selectively formed in the upper parts of the semiconductors so as to be in parallel to the light application surface and non-single crystal semiconductors are used as those semiconductors. CONSTITUTION:2nd semiconductor 2 is formed on 1st semiconductor 43 and further 3rd semiconductor is formed on it by the same forming conditions as the 1st semiconductor 43. After the semiconductors are etched and only the parts necessary for a photoelectric conversion device are left, an insulating film which has masking effect for the 3rd semiconductor is formed on the top surface and side circumference of the semiconductor layers and further the insulating film is selectively removed by photoetching to form apertures at the parts where a positive electrode and a negative electrode are to be formed. Then a P-type region 9 and an N-type region 10 are formed in the 3rd semiconductor layer. The direction of an electric field induced between the P-type region and the N-type region is parallel to a light application surface and carrier recombinations at a junction boundary can be reduced so that a high efficiency photoelectric conversion device can be obtained. |
