| 摘要 |
PURPOSE:To prevent a wiring layer including a high-melting point metal film formed on an Si-containing substrate from being silicified in a high-temperature process as well and to contrive to constitute a low-resistance contact layer by a method wherein at least part of the layers of the high-melting point film is constituted of a high-melting point metal nitride film. CONSTITUTION:A tungsten nitride (WN) film 102 is formed on an Si substrate 101 by a sputtering method. Then, a tungsten film 103 is formed by a sputtering method. Moreover, a heat treatment is performed in an atmosphere of ammonia and a tungsten nitride film 104 is formed on the surface of the tungsten film 103. Subsequently, a poly Si film 105 of a film thickness of about 5,000Angstrom is formed on the upper layer of this film by a CVD method. On this semiconductor device wherein each layer is formed in such a way, a 60min heat treatment is performed in an atmosphere of oxygen and 1,000 deg.C, but the formation of a silicide is not seen on the interface of the tungsten nitride film 104 and the poly Si film 15 and an electrical conduction between the poly Si film 105 and the Si substrate 101 is confirmed.
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