| 摘要 |
An InP solar cell having a p-type InP single crystal substrate having a carrier concentration of 2x1016-2x1018 cm-3, an n-type InP layer containing a dopant of at least one element selected from VIA group including S and Se disposed on said substrate with a thickness of 0.05-1 mu m, said n-type InP layer having a carrier concentration of 5x1017-1x1019 cm-3, a grid electrode arranged on said n-type InP layer, and an anti-reflection coating formed on said n-type InP layer and said grid electrode. The solar cell has a high efficiency and superior radiation resistance characteristics.
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