Semiconductor device of the three-dimensional type and method for its production

摘要

A semiconductor device of the three-dimensional type comprises a first semiconductor integrated circuit layer 1 containing active zones 12, insulation layers 13, grid or gate electrodes 14 and interconnection layers 11; an insulation layer 3 is formed on it; and a second semiconductor integrated circuit layer 2 including active zones 22, insulation layers 23, grid or gate electrodes 24 and interconnection layers 21. The active zones 22a, 22b and 22c in the second layer are connected directly to an interconnection layer 11a, to an active zone 12b and to a grid or gate electrode 14c in the first layer, which are situated immediately underneath, by inter-layer connections 5a, 5b and 5c through a contact hole or right configuration hole so as to be able to reduce the distance of each inter-layer connection.