| 摘要 |
PURPOSE:To increase the productivity of pattern drawing by a method wherein when the minute pattern for semiconductor element is drawn while feeding samples continuously, the detection of marks is performed right under the beam axis where the detection of marks with high accuracy is possible only by the necessary times for an each drawing area required for the accuracy, and at the same time, correction according to the height of the sample and correction of deflection distortions are made. CONSTITUTION:The locus 32 of the charged beam in an optoelectronic lens barrel 31 is directed onto the sample present on a stage 37 through a beam deflector 33 and a control calculator 39 is arranged in the outside of the lens barrel 31. Next, the deflector 33 is controlled by the pattern date correction calculator 34 and the deflection-distortion correction calculator 300 which are connected to the calculator 39. Also, the sample is irradiated with the ray of light from a laser measurement device 320 and the information about the height of the sample obtained the reflected beam detectors 38-1 and 38-2 arranged around the samples is inputted in the calculator 39 through a mark detection device 35. Next, the stage 37 is controlled by a stage control device 36 connected to the calculator 39 and the mark detection is performed by necessary times and the beam exposure is done while correcting of the height of samples and the deflection distortion. |
