| 摘要 |
PURPOSE:To enable the high-speed and high-accuracy exposure by providing the exposure of multibeam system comprising objectives composed of matrix lenses arranged two-dimentionally with the correction means which correct a curvature of image field or an astingmatism or both of them for each of plural lenses. CONSTITUTION:On a surface of a sample 54, a lens 51 which is the center of matrix lenses and matrix lenses 52 located around it are arranged. When the sample surface 54 is irradiated with the charged beam, the periphery of a image forming plane 53 is curved upward and a displacement is produced on the image forming plane. Then, correction lenses 55 are provided for those lenses and bring the image forming plane 53 and the sample surfce 54 in accordance. Namely, the correction lens 55 is composed of a pair of outside electrodes 71 and plural intermediate electrodes 72 which located in the middle of said electrodes 71 and separated by an insulator 73 and the planes 53 and 54 are brought in accordance by controlling the bias voltage to be applied to the electrodes 71. Thus, the exposure device suitable for submicron pattern can be obtained. |
