| 摘要 |
PURPOSE:To enable the attainment of a highly reliable thin film transistor by an inexpensive apparatus, by a method wherein a substrate is once moved into a preparatory chamber so as to subject a reaction chamber to plasma cleaning on the occasion when a gate insulating film and an amorphous silicon film are formed in the reaction chamber by a plasma CVD method. CONSTITUTION:A gate electrode 26 is formed on an insulating substrate 25, and a gate insulating film 27 is formed on the insulating substrate 25 whereon said gate electrode 26 is formed, in a reaction chamber 13 of a plasma CVD apparatus comprising two chambers, a preparatory chamber 14 and the reaction chamber 13, by a plasma CVD method. Next, the insulating substrate 25 whereon the gate insulating film 27 is formed is moved from the reaction chamber 13 into the preparatory chamber 14, and the reaction chamber 13 is subjected to plasma cleaning. Then, the insulating substrate 25 whereon the gate insulating film 27 is formed and which is located in said preparatory chamber 14 is moved into the reaction chamber 13, and an active film of amorphous silicon 28 is formed on the gate insulating film 27 of the insulating substrate 25 in the reaction chamber 13 by the plasma CVD method. Thereafter, a resist pattern for source and drain electrodes is formed, for instance, and then a P- doped a-Si film 29 for improving ohmic contact is formed. Subsequently, Ti/NiCr is evaporated 30, 31 in vacuum to form the source and drain electrodes. |
