| 摘要 |
PURPOSE:To improve transfer margin at a junction part by shortening a plasma processing time applied in the direction from an ion injection area toward the ion injection bundary, at the junction part of an ion injection transfer path and a 'permalloy(R)' transfer path. CONSTITUTION:The rare gas plasma processing which is executed to increase the inductive anisotropic magnetic field change of an ion injection layer 21, is made gradually less applied as it goes from the layer 21 to the ion injection boundary 23. Consequently, a resist pattern 24 that is tapered in the direction from the boundary 23 to the layer 21, is formed. As a result, the amount of plasma reaching the layer 21 increases as the plasma gradually etches the tapered part. Therefore, the drastic change of the inductive anisotropic magnetic field change of lattice distortion in the vicinity of the boundary 23 is metigated. In such a way, the transfer margin at the junction part of the path 21 and that 22 can be improved with a simple constitution of the element.
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