发明名称 Dual access memory cell and dynamic memory using such a cell
摘要 Dual access memory cell for dynamic memory. Two transistors M1, M2 are connected to the same memory capacitance CM in order to allow access to a memory slot by two independent circuits WL1, BL1 and WL2, BL2. A dynamic memory thus formed can be refreshed in a user-transparent manner regardless of the read/write cycle underway or not. <IMAGE>
申请公布号 FR2595161(A1) 申请公布日期 1987.09.04
申请号 FR19860002875 申请日期 1986.02.28
申请人 EUROTECHNIQUE 发明人 JACEK KOWALSKI
分类号 G11C8/16;G11C11/404;G11C11/4097;(IPC1-7):G11C11/24;G11C11/40 主分类号 G11C8/16
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