| 摘要 |
1. Method of making ohmic and/or Schottky barrier contacts on a semiconductor substrate consisting of N-conductive silicon, by depositing on parts of the cleaned substrate with a first metal selected from the group consisting of platinum, palladium, nickel, rhodium, zirconium, hafnium, and by subsequent sintering, and by depositing on the thus formed metal silicide or another exposed part of the semiconductor substrate a second metal selected from the group consisting of aluminum, tantalum, titanium, tungsten, or titanium-tungsten, characterized in that for removing traces of oxygen in the vacuum chamber the desired metal is deposited on freshly cleaned silicon semiconductor substrates, at a low pressure and low temperature, and immediately afterwards in the same chamber onto silicon contact windows of semiconductor substrates with integrated circuits. |
