| 摘要 |
<p>PURPOSE:To form a functional deposited film useful for application to electronic devices by forming plural precursors of a gaseous raw material gaseous hydrogen and gaseous halogen oxidizing agent and forming the deposited film on a substrate by such precursors. CONSTITUTION:The gaseous raw material for forming the deposited film, gaseous hydrogen and the gaseous halogen oxidizing agent which exerts an oxidation effect to the raw material are introduced into a reaction space and the brought into chemical contact with each other to form the plural precursors contg. the precursor atom-like hydrogen in an excitated state. The raw material includes straight chain, ranched chain and chain silane compds., etc., and the oxide includes gaseous halogens such as F2 and Cl2, fluorine and chlorine in a nascent state, etc. The ratio of the raw material and the oxidizing agent is specified to about 1/20-100/1. The ratio of the gaseous hydrogen to the oxide 1 is made about >=0.01 and the mixing pressure is maintained under about 1X10<-7>-10atm. At least one of the precursors are used as the supply source for the element to constitute the deposited film and the deposited film is formed on the substrate. The substrate temp. is kept at about 70-350 deg.C in this stage.</p> |
