| 发明名称 |
Insulated gate type field effect transistor. |
| 摘要 |
<p>Extension directions of source electrode layer (l4) and a drain electrode (l5) are parallel to rows or columns of an array of alternately arranged source regions (l2) and drain regions (l3), thereby forming widths of source and drain electrode layers wider than those of a conventional transistor to obtain a large mutual conductance. </p> |
| 申请公布号 |
EP0234276(A2) |
申请公布日期 |
1987.09.02 |
| 申请号 |
EP19870100813 |
申请日期 |
1987.01.21 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-COMPUTER ENGINEERING CORPORATION |
发明人 |
KINUGASA, MASANORI C/O PATENT DIVISION;TANAKA, FUMINARI C/O PATENT DIVISION;SHIGEHARA, HIROSHI C/O PATENT DIVISION;OHTA, HIROKATA |
| 分类号 |
H01L29/78;H01L23/528;H01L27/118;H01L29/417;H01L29/423;H01L29/94;(IPC1-7):H01L29/52;H01L23/52 |
主分类号 |
H01L29/78 |
| 代理机构 |
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