| 发明名称 |
STRESS RELIEVED INTERMEDIATE INSULATING LAYER FOR MULTILAYER METALIZATION |
| 摘要 |
There is disclosed herein a stress relieved intermediate insulating layer consisting of one or more layers of spun-on glass lying over a metalization pattern. The spun-on layers are allowed to crack from thermal stress imposed upon the structure. The cracks in the spun-on layers are then filled with a glass layer deposited by CVD or LPCVD. |
| 申请公布号 |
EP0206937(A3) |
申请公布日期 |
1987.09.02 |
| 申请号 |
EP19860401341 |
申请日期 |
1986.06.19 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
LEHRER, WILLIAM I. |
| 分类号 |
C23C18/12;C23C16/40;C23C28/04;H01L21/31;H01L21/3105;H01L21/316;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/52 |
主分类号 |
C23C18/12 |
| 代理机构 |
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代理人 |
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