发明名称 |
MOSFET GATE PROTECTING CIRCUIT |
摘要 |
PURPOSE:To prevent the breakdown of an MOSFET due to the surge component of a gate driving voltage, by providing a voltage limiting circuit constituted by constant voltage diodes between a gate and a source. CONSTITUTION:Constant voltage diodes 2 and 3 are inserted between the gate and the source of an MOSFET 1 in the reverse direction to each other. When the diodes 2 and 3 are set so that the value of a limiting voltage becomes less than the withstanding voltage between the gate and the source of the FET 1, the breakdown due to an excessive surge component can be prevented. |
申请公布号 |
JPS62199064(A) |
申请公布日期 |
1987.09.02 |
申请号 |
JP19860042230 |
申请日期 |
1986.02.27 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HAYASHI TOMOHISA |
分类号 |
H01L27/088;H01L21/8234;H01L27/02;H01L29/78;H02H7/20;H03F1/00;H03F1/42;H03F1/52 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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