发明名称 MOSFET GATE PROTECTING CIRCUIT
摘要 PURPOSE:To prevent the breakdown of an MOSFET due to the surge component of a gate driving voltage, by providing a voltage limiting circuit constituted by constant voltage diodes between a gate and a source. CONSTITUTION:Constant voltage diodes 2 and 3 are inserted between the gate and the source of an MOSFET 1 in the reverse direction to each other. When the diodes 2 and 3 are set so that the value of a limiting voltage becomes less than the withstanding voltage between the gate and the source of the FET 1, the breakdown due to an excessive surge component can be prevented.
申请公布号 JPS62199064(A) 申请公布日期 1987.09.02
申请号 JP19860042230 申请日期 1986.02.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAYASHI TOMOHISA
分类号 H01L27/088;H01L21/8234;H01L27/02;H01L29/78;H02H7/20;H03F1/00;H03F1/42;H03F1/52 主分类号 H01L27/088
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