| 摘要 |
PURPOSE:To make it possible to implement miniaturization, by keeping the contact area between source and drain diffused layers and a silicide layer, and bringing an element isolating insulator layer close to the end of a gate electrode. CONSTITUTION:An SiO2 isolating layer 4 is formed on a silicon substrate 5. An amorphous Si layer is selectively formed thereon. Thereafter, a gate electrode 1, a gate oxide film and a protecting oxide film 2' and low concentration source and drain diffusing layers 3' are formed. Then, a metal layer and an amorphous Si layer are deposited, and heat treatment is performed. Thus a silicide layer 6 is formed. Thereafter, high concentration source and drain diffused layers 30S and 30D are formed by ion implantation. The contact part of the source and drain electrodes 7 are selectively formed on the upper part of the isolating layer 4. In this constitution, the silicide layer is contacted with a side surface 50 of the source and drain regions, and the contact resistance is kept. Therefore, the distance between the film 4 and the electrode 1 is decreased, and miniaturization can be implemented.
|
