| 摘要 |
PURPOSE:To enable positions, where crystal grain fields are generated, to be controlled, by melting/solidifying a poly Si film sample, whose structure has a heat sink near a seed large in width, to be recrystallized. CONSTITUTION:A Si oxidizing film 2 and a seed 3 whose width is composed of 1mum and 7mum for example are formed on the surface of a Si substrate 1. The 1mum and the 7mum in widths of the seeds 3 are alternately arranged in stripe shapes. A poly Si film 4 is piled thereon and caps 5 and 6 of Si nitriding film are attached. Thereafter, a Mo film 7 is formed in a stripe shape on only the seed 3 of 7mum in width. Melting and recrystallization of the film 4 is performed by scanning electron beams in the direction parallel to the stripe of the seed 3 on the sample having such structure. Then, solidification of a SOI film advances from the seed part 3 to the advancing direction 8 of solid- liquid interface. Since the seed 3 on the right side in this structure is larger in width, the advancing solid-liquid interfaces come across at the position near the 1mum seed, to enable crystal grain fields to be brought with reproducibility.
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