Semiconductor laser with mesa stripe waveguide structure and manufacturing method thereof.

摘要

There is disclosed a semiconductor layer (10) which can emit a continuous laser beam in a visible wavelength range. The laser (10) has an n-GaAs substrate (12). On this substrate (12), an n-InGaAℓP cladding layer (18), an active layer (20), and p-InGaAℓP cladding layers (22, 24) are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer (26) is provided, defining a laser beam-guiding channel. A thin p-InGaAℓP contact layer (30) and a mesa-shaped, p-GaAs contact layer (32) are formed on the top surface of the upper cladding layer (26). The n-type semiconductive, current-blocking layers (34-1, 34-2) cover the slanted sides of the upper, mesa-shaped cladding layer (26) and also the contact layer (32). They are made of the same n-GaAs compound semiconductor material as the substrate (12).