| 摘要 |
PURPOSE:To reduce stepped parts on the surface of an interlayer insulating film and to suppress the yield of breakdown of a wiring film due to the stepped parts, by performing selective oxidation by using a nitride film as a mask, and growing an oxide film having a specified thickness on source and drain diffused layers. CONSTITUTION:A thermal oxide film 3 is grown on a semiconductor substrate 1, and a nitride film is grown on the film 3. The nitride film at a part, which is to become and element isolating oxide film 5, is removed. With the remaining nitride film as a mask, the film 5 is formed. Then the nitride film on source and drain diffused regions is removed. The source and drain diffused regions 2 are formed by ion implantation. With the nitride film as a mask, selective oxidation is further performed, and an oxide film 8 having a thickness approximate to the film 5 is formed. Then, a gate electrode 4, an interlayer insulating film 6 and holes 6a and 8a are formed. Thereafter a wiring film 7 is grown. Patterning is performed, and the device is completed. Thus the step parts on the surface of the interlayer insulating film become small, and the yield of breakdown of the wiring film due to the irregularity of the wiring film is suppressed.
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