| 摘要 |
PURPOSE:To obtain a multilayer interconnection characterized by a flat surface and high reliability, by providing metal interconnection for mutually connecting elements, which are isolated with grooves filled with insulating materials with the same width, on a semiconductor substrate. CONSTITUTION:A CVD-SiO2 film 6 is provided on a semiconductor substrate 1. A photoresist mask 7 is provided, and the film 6 is etched. Anodic oxidation is performed, and Al2O3 5 is formed on Al 2. The side surface of the SiO2 6 is slightly etched with diluted fluoric acid. Thereafter the resist 7 is removed. With the Al2O3 5 and the SiO2 6 as masks, RIE is performed and grooves are formed. Then, the SiO2 6 is removed with the deluted fluoric acid. The surface is covered with a plasma Si3N4 film 4. A spin-on oxide film 3 is applied by a rotating method. Then an insulating film, whose surface is flat, is obtained. Thereafter, a second layer wiring is formed. Thus, a multilayer interconnection characterized by high reliability is obtained.
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