发明名称 |
Method of manufacturing a bipolar transistor. |
摘要 |
<p>A method of manufacturing a bipolar transistor (1) with semi-self-aligned p<+> base contacts (27,27a). A base p-type region (28) is formed in a surface region of an n-type region 5 comprising a collector. An element (29) of, for example, n<+> doped polycrystalline silicon, and comprising an emitter, is formed on the surface in contact with the base region (28). The base contacts (27,27a) are formed by implantation and using the element (29) as a mask. An n<+> collector contact (25) is made to the n-type region (5).</p> |
申请公布号 |
EP0234054(A1) |
申请公布日期 |
1987.09.02 |
申请号 |
EP19860200948 |
申请日期 |
1986.02.17 |
申请人 |
STC PLC |
发明人 |
SCOVELL, PETER DENIS;BLOMLEY, PETER FRED;BAKER, ROGER LESLIE |
分类号 |
H01L27/092;H01L21/331;H01L21/8234;H01L21/8238;H01L21/8249;H01L27/06;H01L27/088;H01L29/73;H01L29/732;(IPC1-7):H01L27/06;H01L29/72;H01L21/82;H01L29/04 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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