METHOD OF PRODUCING A CONTACT FOR A SEMICONDUCTOR DEVICE

摘要

A method of producing a semiconductor device comprising the steps of: forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line; forming semiconductor material (silicon) in the window; substituting the material with a metal (tungsten) by reaction of the semiconductor material with a metal compound (WF6 gas); and forming a conductor line over the metal within the window.