| 摘要 |
PURPOSE:To optimize the performances of a light emitting part and a light receiving part individually and to make it possible to perform simultaneous single-line two-way communications, by forming a light receiving element part on a silicon substrate, and providing a double-heterojunction surface-light emitting element part thereon through a buffer layer. CONSTITUTION:An N-type region 2 is formed on a P-type Si single crystal substrate 1. On the vicinity of the central part of the region 2, a P-type AlxGa1-xAs layer or a P-type AlxGa1-xAs/AlyGa1-yAs super lattice structure (buffer layer) 3, a P-type AlzGa1-zAs lower clad layer 4, a P-type AlwGa1-wAs active layer 5, and an N-type AluGa1-uAs upper clad layer 6 are grown. Unnecessary parts are etched away. An insulating layer 8 is formed on the substrate 1, and electrodes 7, 9 and 10 are formed. When light is received, a reverse bias is applied to the light receiving element part, and the incident light is received in the N-region 2. When the light is emitted, a voltage is applied, and the recombined light is generated from the active layer 5. |
