| 摘要 |
PURPOSE:To obtain a high-reliability IC by a simple process by opening a buried region having a wide aperture on a semiconductor substrate by etching and filling that wide opening with a semiconductor layer by an epitaxial growth. CONSTITUTION:A photoresist film 10 of a semi-insulating substrate 1 is provided with openings on the surface 11 of an element isolation layer. An SiO mask 12 is arranged and is subjected to wet etching to form a region 14 surrounded with an element isolation region 13. In the region 14, an N<+> collector connection layer 2, an N<-> collector layer 3, and a P<+> base layer 4 which are of GaAs, and an N-AlGaAs emitter layer 5, and an N<+>-GaAs connection layer 6 are laminated by MBE technique. At this time, a polycrystalline laminar layer 15 grows on the SiO2 film and it is removed together with the SiO2 by a solution of HF group. After that, an emitter electrode E, a base electrode B, a collector electrode C and a wiring layer are formed by a conventional technique. By this constitution, the formation of an element isolation layer becomes extremely easy and the number of processing steps is reduced and the quality can be improved.
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