| 摘要 |
PURPOSE:To easily produce the title high-grade single crystal in a short time by charging the raw material of a group III-V or group II-VI single crystal and a sealant into a crucible provided with a partition wall, then heating the material in one step, and covering only one surface of the melt with the liq. sealant. CONSTITUTION:A communicating tube 26 is arranged in an outer crucible 25 as an inner crucible, a group III or group II element 27 such as Ga and In is charged at the bottom of the outer crucible 25, a III-V or II-VI compd. material 38 is charged thereon, and the lower part of the communicating tube 26 is embedded in the materials. The sealant 29 is charged into only one (e.g., the inside of the communicating tube 26) between the inner and outer crucibles which are separated by the peripheral wall of the communicating tube 26. Only the inside of the communicating tube 26 is covered with the liq. sealant 20 by heating and melting the crucible charged with the raw material and the sealant in one step. The crystallinity is enhanced due to the impurity capturing action of the liq. sealant, the stoichiometry is secured due to the control of the vapor pressure, and further the operation process in the production of a single crystal can be simplified.
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