| 摘要 |
1,047,778. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Aug. 12, 1963 [Aug. 18, 1962], No. 31775/63. Heading H1K. A metal terminal member is maintained in non-bonded contact with a semi-conductor wafer by a powder which is contained under pressure within a housing for the device. The housing is in two parts which fit together in the manner of a piston and cylinder. A germanium, Groups III-V, Groups II-VI or, as particularly described, a P-type 1000 #/cm. Si wafer has alloyed at 700‹ C. to its two major surfaces, wafers of Au containing 0.5% B and Au containing 0.5% Sb respectively to form a PN junction diode. A copper connector 8 having a silver-plated Mo end plate brazed thereto is then inserted into the part (cylinder) 9 of the casing which contains a powder of SiO 2 , Al 2 O 3 or colloidal silica 11. The wafer 5 is laid on the plate and the device is enclosed by a copper " piston " 6 which has an Ag plated Mo plate 7 brazed thereto. The two parts of the housing are clamped together as shown by bending over lugs carried by piston 6 whereby the powder is subjected to a pressure of between 50 and 500 kgm/cm.<SP>2</SP> and thus maintains the terminals 7 and 8 in intimate non-bonded contact with the faces of the wafer. The mating faces of the wafer and terminals are initially ground flat. The powder may include a component e.g. calcium sulphate for gettering water or metal vapours in the housing. A plastics sleeve 10 serves as an insulating seal between connector 8 and the casing part 9. The latter may be located and retained under spring pressure within an outer casing which is attached to piston 6 (Fig. 4, not shown). The powder may be confined in the immediate vicinity of the wafer by means of a spring- loaded ceramic disc located in the casing part 9. In a transistor having a number of concentric base and emitter electrodes, conductive bridging members may be ultrasonically welded to the electrodes before the device is mounted in its housing, the contact between the collector electrode and its terminal member then being made in the above described manner (Figs. 6- 10, not shown). The device may be of the PNPN type or it may be a photo-diode. |
