| 摘要 |
PURPOSE:To prevent the deterioration of a seed crystal by covering the periphery of the seed crystal with a heat shielding material, and intercepting the radiation heat while the seed crystal is lowered and dipped in a raw material melt in the production of a compd. semiconductor single crystal by LEC method. CONSTITUTION:The seed crystal 1 is covered with the heat shielding cylindrical body 2 in the production of a compd. semiconductor by LEC method. An annular cavity part 10 is preferably formed around the lower end of the cylindrical body 2 to generate buoyancy in a liq. sealant 3. While the seed crystal 1 is lowered, the seed crystal 1 is completely covered with the cylindrical body 2, so the radiation heat is intercepted, and the deterioration of the seed crystal is prevented. When the cylindrical body 2 is floated in the liq. sealant 3, the lower end of the seed crystal 1 protrudes from the lower end of the cylindrical body 2. Consequently, since the cylindrical body 2 never touches the raw material melt 4 during seeding, the melt 4 is not adversely affected, and seeding can be carried out by an ordinary method.
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