| 摘要 |
PURPOSE:To reduce the blur of implanted electron group in a semiconductor device by providing a barrier which can be tunneled to a particle implanted portion, and a quantized level, and setting the energy level of the quantized level and next level to a specific value or larger. CONSTITUTION:Particles are hot-injected by a resonance tunneling effect by two energy barriers B1, B2 and a sole quantum well W having a thickness which can be tunneled by an emitter (or a source) of n<+> type Alx'G1-x'As (0<x'<=1), for example, without using a hetero structure. Here, the energy difference of the level E1 of a base and next E2 is 3kT or larger. The base of i-GaAs of low impurity density can be sufficiently thinly formed so that hot electrons having injected delta-functional energy distribution can run at high speed as it is. Thus, a margin of noise at switching time, for example, in the characteristics of the element can be increased by injecting hot particles having delta-functional energy distribution. |
