| 摘要 |
PURPOSE:To improve the reliability of a semiconductor element and to manufacture a semiconductor device having high yield by uniformizing thermal energy applied to wafers after finishing two steps of forming a thin polycrystalline film by a reduced pressure CVD method and adding an impurity to the thin polycrystalline film by a vapor diffusing method. CONSTITUTION:In the steps of forming a conductive layer, the total C of ther mal energy distributions A, B of a furnace 1 applied to wafers 2 after finishing two steps of forming a thin polycrystalline film and adding an impurity while holding the uniformity of the film thickness in the forming step and the uniform ity of resistors in the adding step. As a result, the diameters of the particles on the many wafers 2 after finishing vapor diffusing step can be fallen within the range approx. 2,000-3,000Angstrom , and the irregularity becomes very small. There fore, the diameter of the particles, the thickness and the resistances of thin polycrystalline film after finishing the two steps all become uniform among the wafers 2, and the reflectively and the oxidizing velocity of the film all become uniform among the wafers 2.
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