| 摘要 |
PURPOSE:To enhance resistance to heat, plasma, etc., by adding a silylating agent to a positive resist contg. novolak resin having a phenolic OH group and silylating it. CONSTITUTION:A silylating agent, such as hexamethyldisilane, is added to a positive resist having a phenolic -OH group to execute silylating reaction, as shown in the reaction formula, and to substitute H of said -OH for -SiR3. When an intended plasma-resistant resist thus obtained is etched, discoloration and weight loss of the resist film is small as compared with the case using a resist not treated with the silylating agent, high frequency power can be raised and the etching grade of the material to be etched can be increased, and the resist can be patterned in high resolution because the resist film can be made thin. |
