| 摘要 |
PURPOSE:To fine-adjust the titled integrated circuit easily without having an adverse effect on a thin-film resistor by forming a high-concentration diffusion resistor in series with the thin-film resistor and trimming the high-concentration diffusion resistor. CONSTITUTION:An N<+> type high-concentration diffusion resistor 3 is connected to a thin-film resistor R1, resistance thereof must be adjusted, the N<+> type high- concentration diffusion resistor is divided into a plurality of resistance elements R2-Rn having equal resistance value, each both end section of the divided resistance elements is short-circuited by a common aluminum link conductor 4, and a thin-film resistance value is adjusted as a resistance value between C and C' by cutting the conductor. The N<+> type high-concentration diffusion resistor 3 can be formed at the same time as an emitter for a bipolar N-P-N type transistor. The resistor 3 is changed into a plurality of the resistance elements connected in series by metallic electrodes 5 formed at regular intervals in the resistor 3, an aluminum link trimming section is formed by the aluminum link conductor 4 shaped at the same time as the metallic electrodes 5, and the metallic electrode 5 at one end functions as the thin-film resistor R1 and the metallic electrode 5 at the other end as the other terminal of an obtained resistor. |
