| 摘要 |
PURPOSE:To obtain an element free from deterioration or the like in spectral characteristics even when the filling rate of MgF2 film is about 0.7, by executing a vacuum baking before a can sealing to form a film at a normal temperature. CONSTITUTION:First, a photodiode is formed on an Si wafer and a interference filter 2 comprising a multilayer film made up of a Ag and MgF2 is formed on a light receiving surface of the photodiode by vacuum evaporation. Then, this wafer is taken out into outside air divided into one-chip units. Then, one chip element 1 is dye bonded on a stem 6 by a conducting paste or the like and an electrode on the chip 1 is connected to an electrode on the stem 6 by wire bonding using Au wire or the like. The stem 6 is sent into a vacuum baking furnace 11. Then, a door 1a following a sealing chamber 12 of the vacuum baking furnace 11 is opened to send the stem carrying the chip, a cap and the like to the sealing chamber 12 where a can sealing is done. After the sealing, the completed element is taken outside from a take-off port 13.
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