| 摘要 |
PURPOSE:To conveniently produce the titled semiconductor with good reproducibility without necessitating the temp. control under high-pressure conditions by allowing the first raw material consisting essentially of phophorus to catalytically react with the second raw material for forming a compd. semiconductor with phosphorus in the liq. phase in a reaction vessel. CONSTITUTION:The first raw material consisting essentially of phosphorus and the second raw material such as In for forming a compd. semiconductor with phosphorus are charged in the reaction vessel 1, and an inert gas such as nitrogen is further injected to pressurize the vessel at >=50atm. The high- temp. part A is heated at about 1,100 deg.C by a heater 3, and the reaction vessel 1 is rapidly moved to the low-temp. part B from the high-temp. part A. As a result, the solid In and P in the reaction vessel 1 are liquefied, a reaction occurs at about 1,000 deg.C, and InP is formed. A part of the solid phosphorus is gasified, cooled and liquefied while passing through the upper part of the reaction vessel 1 or a contracted part 2, dropped, and accumulated on the layer at the lower part of the reaction vessel 1. Meanwhile, solid In is directly liquefied, and allowed to react with liq. phosphorus to form InP. The time is reduced to <=1/3 of that of the conventional horizontal Bridgman method.
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