| 摘要 |
PURPOSE:To obtain a Ga metal feeder, in which an ultra-high vacuum need not be broken in order to replenish Ga, by mounting a molecular-beam nozzle, a bottom thereof has an opening, in place of a crucible in a molecular-beam crystal growth device in the Ga metal feeder. CONSTITUTION:A transport pipe valve 8 is closed previously, a proper quantity of a Ga metal is charged into a sub-vessel 2 from a charging port 12, and the charging port 12 is closed. Air in the sub-vessel 2 is discharged from an exhaust port 11. An inert gas or a reducing gas is introduced from a gas supply port 10, and the Ga metal in the sub-vessel 2 is melted in the presence of these gases or under a vacuum, and changed into liquid Ga 7. A Ga transport pipe 3 is also heated by a heater 4, and the inside of the Ga transport pipe 3 is filled with liquid Ga 7. The intermediate valve 8 is opened. Liquid Ga gradually flows into a molecular-beam nozzle 5 from the sub-vessel 2 by pressure difference. The pressure Q of a molecular-beam crystal growth chamber 1 and the pressure p of the sub-vessel 2 balance. The level S of the molecular-beam nozzle 5 is made higher than that T of the sub-vessel 2. Level height in the molecular- beam nozzle can be kept in ideal height s0 by the pressure P of the sub-vessel and the level height (t) of the sub-vessel.
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