| 摘要 |
PURPOSE:To obtain an SOS substrate having less current leakage and preferable characteristics by composing the step of laminating a seed layer of a growing step of a silicon with monosilane gas thermal decomposition at 890-925 deg.C and its annealing step at 950-1,000 deg.C. CONSTITUTION:A seed layer of thin silicon and a thick amorphous silicon layer are laminated on a spinel or sapphire substrate, and the amorphous silicon layer is single-crystallized by heat treating to manufacture an SOS substrate. In this case, the laminating step of the seed layer is formed of a growing step of a silicon by monosilane thermal decomposition at 890-925 deg.C and its annealing step at 950-1,000 deg.C. Thus, the SOS substrate having less leakage current and preferable characteristics can be obtained.
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