| 摘要 |
PURPOSE:To prevent the cloudiness of an observation port by the gettering action of a deposition layer on an adsorption wall in the vicinity of the observation port by attaching vapor from an evaporation source for gettering onto the adsorption wall. CONSTITUTION:Vapor is not projected directly to main evaporation sources 2a, 2b, a substrate 3, a heater 4, an observation port 5, etc. from an evaporation source 7 for gettering, and the evaporation source 7 discharges its own vapor near a space in which there is a vapor flow toward the observation port 5 from the main vapor sources 2a, 2b. A masking shield 8 limiting the direction of discharge of the vapor of the evaporation source 7 for gettering and an adsorption wall 9, on which the vapor of the evaporation source 7 is deposited and which adsorbs other vapor, are mounted onto the inner wall of a tank 1. Consequently, the single crystal of gallium arsenide is grown on the substrate 1, and the inside of the tank 1 during deposition can be observed from the observation port 5. The gallium vapor of the evaporation source 7 for gettering adheres on the adsorption wall 9 in the vicinity of the observation port 5, arsenic vapor projected to the adsorption wall 9 section is coupled, the reevaporation of the arsenic vapor is prevented, one part of the gallium vapor of the evaporation source 7 is combined with arsenic in a space, and arsenic is changed into vapor difficult to be reevaporated and attached onto the inner wall of the tank 1 up to the observation port 5.
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