| 摘要 |
PURPOSE:To eliminate the deterioration of isolation voltage by a shape effect by forming a first insulating film, executing removal treatment, leaving one part of the first insulating film and shaping a second insulating film approximately flatly. CONSTITUTION:SiO2 or Si3N4 2 is formed onto the surface of a substrate 1 through thermal oxidation or thermal nitriding treatment. SiO2 or Si3N4 2 is removed, leaving a residual insulating film 4 only in a defective section 3. A re-oxidation film 5 is shaped through thermal re-oxidation treatment. Consequently, the re-oxidation film 5 is formed approximately flatly. Accordingly, the deterioration of isolation voltage by a shape effect is eliminated.
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