| 摘要 |
PURPOSE:To dry-develop a lower-layer resist with excellent directional properties by forming the pattern of the lower-layer resist by RIE dry development while shaping an organic film having high etching resistance onto an upper-layer positive resist. CONSTITUTION:A film to be etched 12 is formed onto an Si substrate 11, the upper section of the film 12 is coated with a PMMA resist 13 and an upper-layer resist 14 to shape double resist structure, and the positive resist is developed to form upper-layer resist patterns 14a. when the mixed gas of C2F6+CHF3 is used, a wafer for a plane parallel plate electrode is placed, irregularities are shaped to the surface of a pedestal 15 for the electrode section and RIE etching is conducted on RIE dry development, the resist 13 is etched while fluorine group organic films 16 having large plasma resistance are formed onto the patterns 14a.
|
