| 摘要 |
PURPOSE:To improve the reliability and efficiency and to keep the advantage of the monolithic structure as it is by forming an impurity concentration distribution increased toward an insulation layer near the insulation layer of the semiconductor layer in the monolithic structure including the lamination layer structure comprising an n(p) channel semiconductor layer, the insulation layer and the piezoelectric layer. CONSTITUTION:The monolithic structures is provided to an element 10, where the n(p) channel semiconductor layer 12, the insulation layer 14 and the piezoelec tric layer 16 and laminated in the order. The gradient impurity concentration distribution region 18 having an impurity concentration distribution increased toward the insulation layer 14, as shown in figure is formed between the semicon ductor layer 12 and the insulator layer 14. Thus, a depletion layer capacitance (C)-applied voltage (V) characteristic curve in response to the distribution curve is obtained from the impurity concentration distribution region 18. Thus, even when the applied electric field is changed slightly, since the depletion layer capacitance is changed remarkably, the efficiency and sensitive are improved.
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