| 摘要 |
PURPOSE:To prevent the electrification of a sample, the splashing thereof by repulsion and the deterioration in quality, contamination, etc. by embedding the sample into a liquid metal or low melting metal having high purity and low vapor pressure and holding the same. CONSTITUTION:A small In lump 1a having 99.99% purity and 156 deg.C m.p. is melted by heating on a holder 2 consisting of SUS to form an In layer 1, then the holder 2 is cooled with air. The powder sample 4 of an insulator is thinly and uniformly sprinkled on the In layer 1 and after the layer is lightly pressed, the In layer 1 is solidified. The sample 4 is loaded together with the holder 2 to the device and an ion beam 5 is irradiated to the sample 4 to analyze the elements thereof. An electric charge 6 generated on the sample surface conducts to the In layer 1 and therefore, there is no disturbance of the analysis by the electrification of the sample itself. The deformation of the sample shape is obviated according to the above-mentioned method and since the In has the high purity and low vapor pressure, impurities and released gases are hardly generated and the contamination of the sample and the device is obviated. |
