| 摘要 |
PURPOSE:To facilitate the measurement of characteristics of microwaves by a construction wherein a resistor having the same resistance value as the characteristic impedance of a measuring system and a capacity are connected in series together and a circuit for measurement having an electrode for impression of bias between the resistor and the capacity is formed for a connection to a terminal of any of a first gate, a second gate or a drain of a dual gate FET. CONSTITUTION:A resistor 11 having the same resistance value as the characteristic impedance of a measuring system whereby measurement is conducted is formed on a substrate by ion implantation, and all elements of a capacity 12 for DC interruption, a pad 13 being an electrode for impression of bias, a coplanar line 14 connected to a firs gate 3 and a coplanar line 15 connected to a second gate 4 are formed on the same semiconductor substrate of GaAs. When the characteristics of microwaves are measured, RF probe needles 21a and 21b formed of coplanar lines are set, and measurement is conducted by impressing a voltage on the pad 13 for impression of bias by means of a probe needle 22. The accuracy of measurement is increased, since a RF probe can be employed.
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