发明名称 TRI-STATE GATE
摘要 PURPOSE:To strengthen the logic function without increasing the parasitic capacitance by designing the titled gate that lots of elements offering the logic function is disconnected from a bus line when the switching elements are set in the off-state, the high impedance state. CONSTITUTION:Transistors (TRs) Mps, Mns of a tri-state gate G3 provided with both a multi-input logic function and an output function of a tri-state by inserting MOS TRs Mps, Mns as switching elements to an operating power supply current path of a multi-input logic circuit G1 are connected to the output side of the circuit G1, and C-MOS TRs Mp1-Mn1, Mp2-Mn2 constituting the logic function of the circuit G1 to the power supply VCC side from the TRs Mps, Mns so as to disconnect the TRs constituting the logic function from the bus line LB when the TRs Mps, Mns are in the off-state, the high impedance output state.
申请公布号 JPS62194733(A) 申请公布日期 1987.08.27
申请号 JP19860035183 申请日期 1986.02.21
申请人 HITACHI TOBU SEMICONDUCTOR LTD;HITACHI LTD 发明人 SHIMAZU KATSUHIRO;WATANABE KAZUO
分类号 H03K19/0175;H03K17/687;H03K19/094 主分类号 H03K19/0175
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