| 摘要 |
PURPOSE:To reduce the effective aspect ratio of a through-hole for a second layer wiring, and to enable an electrical contact between a first layer wiring and the second layer wiring easily and positively by concentrically forming a hillock (a projecting section) to a first layer wiring film shaped to a contact hole section for taking an electrical contact between the first layer wiring and a semiconductor substrate. CONSTITUTION:Selective conversion treatment is executed to a first layer wiring film, an oxide film harder than the first layer wiring film is formed onto the first layer wiring film in region except a region, in which a through-hole for second layer wiring film is shaped, and heat treatment is executed, thus concentrically forming a hillock to the first layer wiring film in the region in which the through-hole for the second layer wiring film must be shaped. The height of the formed hillock is controlled by parameters, such as the film thickness of the hard oxide film, a shaped area, the conditions of heat treatment, etc., the stepped section of the first layer wiring film in the region in which the through-hole for the second layer wiring is formed is compensated, thus reducing the effective aspect ratio of the through-hole for the second layer wiring film.
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