| 摘要 |
PURPOSE:To measure correctly and rapidly the temperature and the distribution of the temperature of the upper surface of a substrate and also, to prevent it for a substrate wafer to be broken and it for the point of a thermocouple to be deformed or broken by a method wherein the liquid drop of a fused metal is formed on the surface of the substrate or the surface of a substrate holder on the side where the formation of a thin film is performed, the point of the thermocouple is dipped into the liquid drop of the fused metal and the temperature of the substrate is measured. CONSTITUTION:A substrate temperature measuring unit 10 is supported by two groups of flanges 11 and 11 for high vacuum, is inserted in a bellows 12 mounted elastically between two groups of the flanges 11 and 11 for high vacuum and its rear end is supported by the flange 11 for growing chamber outside high vacuum interposing an elastic spring 17 between them. The rear end part of a thermocouple 6 is connected to thermionic terminals 15 which are subjected to insulating shield and vacuum seal by means of the outside high-vacuum flange 11 of a growing chamber 1 and its tip part is made to protrude at the tip of an insulating hollow cylindrical tube 13. Thereby, the output to generate in the thermocouple can be measured. Moreover, a metal Ga or In is adhered on a part, which comes into contact to the thermocouple 6, of the surface of a substrate 3, which is used as a body to be temperature-measured, and when the substrate is heated up, these metals are fused and keep adhering only on a part of the substrate surface as a liquid drop 16 without spreading over the whole surface of the substrate because these metals have a surface tension.
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