发明名称 MANUFACTURE OF AMORPHOUS SILICON SOLAR CELL
摘要 PURPOSE:To reduce a time required for forming an (i) layer of a solar cell substrate and to improve productivity and the use efficiency of reaction gas by a method wherein a plasma CVD apparatus of a type enabling the application of a plasma CVD method of a magnetic field excitation mode is employed as an apparatus for forming the (i) layer. CONSTITUTION:A plasma CVD apparatus 2 of a type which is provided with a magnet device 13 of a permanent magnet or the like for generating a magnetic field shaped in a closed loop or intersecting an electric field perpendicularly in front of a parallel plate electrode 8 and which enables the application of plasma CVD by a magnetic field excitation mode, is employed as an apparatus for forming an (i) layer. This (i) layer can be formed rapidly on a substrate 5 by the decomposition of a reaction gas being facilitated by a plasma concentrated in front of the electrode 8. By the plasma CVD of the magnetic field excitation mode, the formation can be conducted 4-5 times faster than by conventional plasma CVD. Therefore, a time for production is reduced, a vacuum vessel 7 of the plasma CVD apparatus 2 can be constructed in sizes approximate to the ones of vessels 7 of other apparatuses 1 and 3, and a production line can be shortened.
申请公布号 JPS62194683(A) 申请公布日期 1987.08.27
申请号 JP19860035083 申请日期 1986.02.21
申请人 ULVAC CORP 发明人 IZUMI HIROHIKO;ISHIBASHI AKIRA;HAYASHI YASUAKI
分类号 H01L31/04;H01L31/20 主分类号 H01L31/04
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