| 摘要 |
PURPOSE:To form an amorphous semiconductor layer with p-i-n structure on a substrate in a single chamber and with good controllability by a method wherein, after a p-type layer is formed, an i-type layer is formed with a lower film forming speed at first and, after a predetermined time, with a higher film forming speed in a reactive gas which does not contain an impurity gas. CONSTITUTION:A substrate 10 consisting of a light transmitting insulating substrate 1 and a transparent conductive film 2 formed on the insulating substrate 1 is placed on a lower electrode 23 in a reaction chamber 21. The inside of the chamber 21 is evacuated by a vacuum evacuation system 24 and a gas introducing valve 25 is opened to introduce a mixed gas of a silane gas and a diborane gas. A radio frequency voltage is applied between an upper electrode 22 and the lower electrode 23 to induce a glow discharge and a p-type amorphous Si layer 5 is formed on the substrate 10. Then the mixed gas is changed over to the silane gas only and an i-type amorphous Si layer 6 is formed with a lower film forming speed at first and, after a predetermined time, with a higher film forming speed. After that, the reactive gas is changed over to a mixed gas of the silane gas and a phosphine gas and an n-type amorphous Si film 7 is formed to complete an amorphous Si layer 3. With this constitution, the impurity concentration in the i-type amorphous Si layer can be kept stable with a required distribution and the manufacture with optimum output characteristics and good reproducibility can be realized. |
